MMDT2907A transistor (pnp) features power dissipation p cm : 0.15 w (tamb=25 ) collector current i cm : -0.6 a collector-base voltage v (br)cbo : -60 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo ic= -10 a, i e =0 -60 v collector-emitter breakdown voltage v (br)ceo ic= -10ma, i b =0 -60 v emitter-base breakdown voltage v (br)ebo i e =-10 a, i c =0 -5 v collector cut-off current i cbo v cb =-50v, i e =0 -0. 01 a emitter cut-off current i ebo v eb = -3v, i c =0 -0. 01 a h fe(1) v ce =-10v, i c = -0.1ma 75 h fe(2) v ce =-10v, i c = -1ma 100 h fe(3) v ce =-10v, i c =-10ma 100 h fe(4) v ce =-10v, i c = -150ma 100 300 dc current gain h fe(5) v ce =-10v, i c =-500ma 50 v ce (sat)1 i c =-150 ma, i b =-15ma -0.4 v collector-emitter saturation voltage v ce (sat)2 i c =-500 ma, i b =- 50ma -1.6 v v be (sat)1 i c =-150 ma, i b =-15ma -1.3 v base-emitter saturation voltage v be (sat)2 i c =-500 ma, i b = -50ma -2.6 v transition frequency f t v ce =-20v, i c = -50ma f= 100mhz 200 mhz output capacitance c ob v cb =-10v, i e = 0 f= 1mhz 8 pf input capacitance c ib v eb =-2v, i c = 0 f= 1mhz 30 pf delay time t d 10 ns rise time t r v cc =-30v, i c =-150ma, i b1 =-15ma 40 ns storage time t s 225 ns fall time t f v cc =-6v, i c =-150ma i b1 = i b2 = -15ma 60 ns marking k2f MMDT2907A http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
typical characteristics MMDT2907A MMDT2907A http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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